FCP11N60, FCPF11N60 دیتاشیت

FCP11N60, FCPF11N60

مشخصات دیتاشیت

نام دیتاشیت FCP11N60, FCPF11N60
حجم فایل 889.013 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCP11N60, FCPF11N60

دانلود دیتاشیت

سایر مستندات

FCPF11N60T 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCPF11N60T
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 36W
  • Total Gate Charge (Qg@Vgs): 52nC@10V
  • Input Capacitance (Ciss@Vds): 1490pF@25V
  • Continuous Drain Current (Id): 11A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@5.5A,10V
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: SuperFET™
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FCPF11
  • detail: N-Channel 600V 11A (Tc) 36W (Tc) Through Hole TO-220F

محصولات مشابه